? 2008 ixys corporation, all rights reserved ds100094(12/08) IXFH110N15T2 trencht2 tm hiperfet power mosfet n-channel enhancement mode avalanche rated preliminary technical information symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c, r gs = 1m 150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 110 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c55 a e as t c = 25 c 800 mj dv/dt i s i dm ,, v dd v dss ,t j 175 c 15 v/ns p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c weight 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 150 c 500 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 13 m v dss = 150v i d25 = 110a r ds(on) 13m g = gate d = drain s = source tab = drain to-247 g d s (tab) features z international standard package z 175c operating temperature z high current handling capability z fast intrinsic rectifier z dynamic dv/dt rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. IXFH110N15T2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 75 115 s c iss 8600 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 685 pf c rss 77 pf t d(on) 33 ns t r 16 ns t d(off) 33 ns t f 18 ns q g(on) 150 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 42 nc q gd 46 nc r thjc 0.31 c/w r thch 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 110 a i sm repetitive, pulse width limited by t jm 440 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 85 ns i rm 6.8 a q rm 290 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) i f = 55a, v gs = 0v -di/dt = 100a/ s v r = 75v
? 2008 ixys corporation, all rights reserved IXFH110N15T2 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0246810121416 v ds - volts i d - amperes v gs = 15v 10v 8v 6v 7v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 6 v fig. 4. r ds(on) normalized to i d = 55a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 110a i d = 55a fig. 5. r ds(on) normalized to i d = 55a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 110 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFH110N15T2 ixys ref: f_110n15t2(61)12-17-08 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 75v i d = 55a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1000 v ds - volts i d - amperes 25s 100s 1ms 10ms 100ms r ds(on) limit t j = 175oc t c = 25oc single pulse
? 2008 ixys corporation, all rights reserved IXFH110N15T2 fig. 14. resistive turn-on rise time vs. drain current 14 15 16 17 18 19 20 55 60 65 70 75 80 85 90 95 100 105 110 i d - amperes t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 75v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 2 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 55a i d = 110a fig. 16. resistive turn-off switching times vs. junction temperature 16 18 20 22 24 26 28 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 30 40 50 60 70 80 t d(off) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 75v i d = 55a, 110a fig. 17. resistive turn-off switching times vs. drain current 17 18 19 20 21 22 23 55 60 65 70 75 80 85 90 95 100 105 110 i d - amperes t f - nanoseconds 20 30 40 50 60 70 80 t d(off) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 75v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 12 13 14 15 16 17 18 19 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 75v i d = 110a i d = 55a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 2 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 10 50 90 130 170 210 250 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 110a i d = 55a
ixys reserves the right to change limits, test conditions, and dimensions. IXFH110N15T2 ixys ref: f_110n15t2(61)12-17-08 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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